NSS12200WT1G دیتاشیت

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مشاهده دیتاشیت NSS12200WT1G	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi NSS12200WT1G
Transistor Type: PNP
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 2A
Power Dissipation (Pd): 450mW
Transition Frequency (fT): 100MHz
DC Current Gain (hFE@Ic,Vce): 100@800mA,1.5V
Collector Cut-Off Current (Icbo): 100nA
Collector-Emitter Breakdown Voltage (Vceo): 12V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 170mV@1A,20mA
Package: SOT-363-6(SC-70-6)
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 290mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 800mA, 1.5 V
Power - Max: 450mW
Frequency - Transition: 100MHz
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Base Part Number: NSS122
detail: Bipolar (BJT) Transistor PNP 12V 2A 100MHz 450mW Surface Mount SC-88/SC70-6/SOT-363